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| APM3005NU N-Channel Enhancement Mode MOSFET Features * 30V/50A, RDS(ON)=4.5m (typ.) @ VGS=10V RDS(ON)=7m (typ.) @ VGS=4.5V Pin Description G D S * * * * Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of TO-252 D Applications G * Power Management in Desktop Computer or DC/DC Converters S N-Channel MOSFET Ordering and Marking Information APM3005N Lead Free Code Handling Code Temp. Range Package Code Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device XXXXX - Date Code APM3005N U : APM3005N XXXXX Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 1 www.anpec.com.tw APM3005NU Absolute Maximum Ratings Symbol Parameter Rating 30 20 150 -55 to 150 16 TC=25C TC=100C TC=25C TC=100C TC=25C TC=100C 100 75 50* 30 50 20 2.5 W C/W V C C A Unit Common Ratings (TA = 25C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP ID PD RJC 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case 2 A A Mounted on PCB of 1in Pad Area IDP ID PD RJA 300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C TA=25C TA=100C 100 75 17 10 2.5 1 50 100 75 14 9 1.6 0.6 75 W C/W W C/W A A Mounted on PCB of Minimum Footprint IDP ID PD RJA Note: * Current limited by bond wire. 300s Pulse Drain Current Tested Continuous Drain Current A A Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 2 www.anpec.com.tw APM3005NU Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM3005NU Min. Typ. Max. Test Condition Unit Drain-Source Avalanche Ratings EAS BVDSS IDSS VGS(th) IGSS Drain-Source Avalanche Energy ID=11A, VDD=20V 30 1 TJ=85C Gate Threshold Voltage Gate Leakage Current VDS=VGS, IDS=250A VGS=20V, V DS=0V VGS=10V, IDS=40A VGS=4.5V, IDS=20A ISD=20A, VGS=0V Frequency=1.0MHz VGS=0V, VDS=15V, Frequency=1.0MHz 4.5 7 1 1.5 30 2 100 5.5 8.5 30 mJ Static Characteristics Drain-Source Breakdown Voltage VGS=0V, IDS=250A Zero Gate Voltage Drain Current VDS=24V, VGS=0V V A V nA m RDS(ON) a Drain-Source On-state Resistance Diode Characteristics VSD a Diode Forward Voltage 0.7 1.3 V pF Dynamic Characteristicsb RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6 1.5 3300 1180 790 13 9 43 14 20 15 66 28 ns Gate Charge Characteristicsb Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=15V, VGS=4.5V, IDS=30A 34.2 7 14.8 45 nC Notes: a : Pulse test ; pulse width 300s, duty cycle 2%. b : Guaranteed by design, not subject to production testing. Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 3 www.anpec.com.tw APM3005NU Typical Characteristics Power Dissipation 60 Drain Current 60 50 50 40 ID - Drain Current (A) Ptot - Power (W) 40 30 30 20 20 10 TC=25 C 0 20 40 60 80 100 120 140 160 180 o 10 TC=25 C,VG=10V 0 0 20 40 60 80 100 120 140 160 180 o 0 Tj - Junction Temperature (C) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 300 100 2 1 Thermal Transient Impedance ID - Drain Current (A) it Lim n) s(o Rd Duty = 0.5 0.2 0.1 10ms 100ms 1s DC 10 0.1 0.05 0.02 0.01 1 0.01 Single Pulse T =25 C 0.1 c 0.1 o 1 10 80 1E-3 1E-4 Mounted on 1in pad o RJA :50 C/W 2 1E-3 0.01 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 4 www.anpec.com.tw APM3005NU Typical Characteristics (Cont.) Output Characteristics 100 VGS=3.5,4,5,6,7,8,9,10V 80 12 Drain-Source On Resistance RDS(ON) - On - Resistance (m) 10 ID - Drain Current (A) 8 60 VGS=4.5V 3V 6 VGS=10V 4 40 20 2.5V 2 2V 0 0 2 4 6 8 10 0 0 20 40 60 80 100 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 100 Gate Threshold Voltage 1.5 IDS =250A 80 Normalized Threshold Vlotage 1.2 ID - Drain Current (A) 60 Tj=125 C 40 Tj=-55 C o o 0.9 0.6 20 Tj=25 C o 0.3 0 0 1 2 3 4 5 0.0 -50 -25 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 5 www.anpec.com.tw APM3005NU Typical Characteristics (Cont.) Drain-Source On Resistance 2.00 VGS = 10V 1.75 IDS = 40A 100 Source-Drain Diode Forward Normalized On Resistance 1.50 IS - Source Current (A) Tj=150 C 10 Tj=25 C o o 1.25 1.00 0.75 0.50 0.25 RON@Tj=25 C: 4.5m 0.00 -50 -25 0 25 50 75 100 125 150 o 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj - Junction Temperature (C) VSD - Source-Drain Voltage (V) Capacitance 5000 Gate Charge 10 VDS=15V ID = 30A Frequency=1MHz 9 VGS - Gate-source Voltage (V) 25 4000 8 7 6 5 4 3 2 1 C - Capacitance (pF) Ciss 3000 2000 Coss 1000 Crss 0 0 5 10 15 20 0 0 10 20 30 40 50 60 70 80 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 6 www.anpec.com.tw APM3005NU Avalanche Test Circuit and Waveforms V DS L DUT tp V DSX(SUS) V DS IAS RG V DD V DD tp IL 0.01 EAS tAV Switching Time Test Circuit and Waveforms V DS RD DUT V GS RG V DD 10% tp V DS 90% V GS td(on) tr td(off) tf Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 7 www.anpec.com.tw APM3005NU Package Information TO-252 (Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 D1 C A1 E1 Dim A A1 b b2 C C1 D D1 E E1 e1 H L L1 L2 Millimeters Min. 2.18 0.89 0.508 5.207 0.46 0.46 5.334 5.2 REF 6.35 5.3 REF 3.96 9.398 0.51 0.64 0.89 1.02 2.032 8 Inches Max. 2.39 1.27 0.89 5.461 0.58 0.58 6.22 6.73 5.18 10.41 Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.205 REF 0.250 0.209 REF 0.156 0.370 0.020 0.025 0.035 0.040 0.080 www.anpec.com.tw Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410 Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 APM3005NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp Critical Zone T L to T P Ramp-up Temperature TL Tsmax tL Tsmin Ramp-down ts Preheat 25 t 25 C to Peak Time Classificatin Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Large Body Small Body Pb-Free Assembly Large Body Small Body 3C/second max. 150C 200C 60-180 seconds 3C/second max 217C 60-150 seconds 245 +0/-5C 250 +0/-5C 10-30 seconds 20-40 seconds Average ramp-up rate 3C/second max. (TL to TP) Preheat - Temperature Min (Tsmin) 100C - Temperature Mix (Tsmax) 150C - Time (min to max)(ts) 60-120 seconds Tsmax to TL - Ramp-up Rate Tsmax to TL - Temperature(TL) 183C - Time (tL) 60-150 seconds Peak Temperature(Tp) 225 +0/-5C 240 +0/-5C Time within 5C of actual Peak 10-30 seconds 10-30 seconds Temperature(tp) Ramp-down Rate 6C/second max. 6 minutes max. Time 25C to Peak Temperature Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 9 6C/second max. 8 minutes max. www.anpec.com.tw Note: All temperatures refer to topside of the package. Measured on the body surface. APM3005NU Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 3 B 100 2 D 1.5 +0.1 C 13 0. 5 D1 J 2 0.5 Po T1 T2 16.4 + 0.3 2.5 0.5 -0.2 P1 2.0 0.1 Ao 6.8 0.1 W 16+ 0.3 - 0.1 Bo 10.4 0.1 P 8 0.1 Ko 2.5 0.1 E 1.75 0.1 t 0.30.05 TO-252 F 7.5 0.1 1.5 0.25 4.0 0.1 Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 10 www.anpec.com.tw APM3005NU Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright (c) ANPEC Electronics Corp. Rev. B.3 - Oct., 2005 11 www.anpec.com.tw |
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